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cond-mat.mtrl-sci2025
Epitaxial growth and semiconductor properties of NiGa2O4 spinel for Ga2O3/NiO interfaces
Kingsley Egbo, Emily M. Garrity, Shivashree Shivamade Gowda +8
Unintentionally formed interfacial layers are ubiquitous in semiconductor devices that operate at extreme conditions. However, these layers' structure and properties often remain u…
cond-mat.mtrl-sci2025
Stability, growth, and doping of In(Si, Ge)O as promising n-type wide-gap semiconductors
Cheng-Wei Lee, Kingsley Egbo, Emily Garrity +4
In this paper we investigate, computationally and experimentally, the phase stability, electronic structure properties, and the propensity for n-type doping of InXO$_{7…