most citedConcatenated continuous driving of silicon qubit by amplitude and phase modulation

1 citations · 2 across the 8 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2026

SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography

Thomas Van Caekenberghe, Paul Steinacker, Bart Raes +31

The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes t…

quant-ph2026

Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays

Arne Loenders, Jacques Van Damme, Clement Godfrin +19

Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness…

cond-mat.mes-hall2026

Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot

Xunyao Luo, Xander Peetroons, Tsung-Yeh Yang +27

Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-ph…

quant-ph2026★ 1 cited

Concatenated continuous driving of silicon qubit by amplitude and phase modulation

Takuma Kuno, Takeru Utsugi, Andrew J. Ramsay +22

The rate of coherence loss is lower for a qubit under the Rabi drive than a freely evolving qubit . Building on this principle, concatenated continuous d…

cond-mat.mes-hall2025

Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry

Petar Tomić, Patrick Bütler, Yuze Wu +17

Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fa…

cond-mat.mes-hall2025

High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer

Xander Peetroons, Xunyao Luo, Tsung-Yeh Yang +26

We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using elect…

quant-ph2025

Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device

Andreas Nickl, Nard Dumoulin Stuyck, Paul Steinacker +24

Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so fa…

cond-mat.mes-hall2025

Hybrid Quantum Systems: Coupling Single-Molecule Magnet Qudits with Industrial Silicon Spin Qubits

Daniel Schroller, Daniel Sitter, Thomas Koch +12

Molecular spin qudits offer an attractive platform for quantum memory, combining long coherence times with rich multi-level spin structures. Terbium bis(phthalocyaninato) (TbPc…

cond-mat.mes-hall2025★ 1 cited

Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements

Marc-Antoine Roux, Joffrey Rivard, Victor Yon +18

Spin qubits need to operate within a very precise voltage space around charge state transitions to achieve high-fidelity gates. However, the stability diagrams that allow the ident…