Rachel Kahler

activity

20242026

most citedRecord-High Electron Mobility and Controlled Low 10

^{15}

^{- 3}

Si-doping in (010)

β

-Ga

_{2}

_{3}

Epitaxial Drift Layers

36 citations · 36 across the 4 of their papers we have counts for

collaborators

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2 papers · 1 filter

physics.app-ph2025

Kilovolt-Class $β - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers

Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4

We report on the growth optimization of intentionally low-doped ( $1 0^{15}$ $c m^{- 3}$ ) high-quality $β - G a_{2} O_{3}$ drift layers up to 10 $μ m$ thick via MOCVD and the fabrication of kil…

physics.app-ph2024★ 36 cited

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $μ$ m thick $β$ -Ga $_{2}$ O $_{3}$ films with electron concentrations in the 10 $^{15}$ cm$^{…

Kilovolt-Class β−Ga2​O3​ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally 1015 cm−3 Doped Drift Layers

Record-High Electron Mobility and Controlled Low 1015 cm−3 Si-doping in (010) β-Ga2​O3​ Epitaxial Drift Layers

Kilovolt-Class $β - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers