67 citations · 96 across the 7 of their papers we have counts for
7 papers
Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2
Baichen Lin, Shanquan Chen, Yubo Zhang +18
Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is oft…
Deciphering the lattice vibrational behaviors of CuInP2S6 by angle-resolved polarized Raman scattering
Yiqi Hu, Jun-Jie Zhang, Zhou Zhou +12
The layered van der Waals (vdW) ferroelectric CuInP2S6 (CIPS) exhibits unique cation hopping-driven phenomena that bring about unconventional properties with intriguing mechanisms…
Distinguish the Orientation of Sliding Ferroelectricity by Second-Harmonic Generation
Fengfeng Ye, Qiankun Li, Zhuocheng Lu +5
As the emerging ferroelectric (FE) materials, the ultrathin two-dimensional (2D) sliding ferroelectrics without phase-matching bottleneck, usually exhibit the pronounced second har…
Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films
Yangyang Si, Ningbo Fan, Yongqi Dong +13
Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in…
Sliding-mediated ferroelectric phase transition in CuInP2S6 under pressure
Zhou Zhou, Jun-Jie Zhang, Gemma F. Turner +16
Interlayer stacking order has recently emerged as a unique degree of freedom to control crystal symmetry and physical properties in two-dimensional van der Waals (vdW) materials an…
Intrinsic ferroelectric switching in two-dimension -InSe
Liyi Bai, Changming Ke, Zhongshen Luo +3
Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D fer…
A gate-programmable van der Waals metal-ferroelectric-semiconductor memory
Wanying Li, Yimeng Guo, Zhaoping Luo +10
Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet…