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cond-mat.mtrl-sci2026
Ab initio Modeling of MoS2/Oxide Device Interfaces with Machine Learned Electronic Structures
Manasa Kaniselvan, Mauro Dossena, Denghui Lu +4
We introduce a new ab initio approach to simulate semiconductor devices that integrates scalable machine-learned (ML) electronic structure models with an advanced quantum transport…
cond-mat.mtrl-sci2025
Channel-last gate-all-around nanosheet oxide semiconductor transistors
Fabia F. Athena, Xiangjin Wu, Nathaniel S. Safron +18
As we move beyond the era of transistor miniaturization, back-end-of-line-compatible transistors that can be stacked monolithically in the third dimension promise improved performa…