31 citations · 44 across the 9 of their papers we have counts for
10 papers
Signal amplification in simple metal-insulator transition devices
Victor Palin, Nareg Ghazikhanian, Matthew Frame +3
Signal dissipation in large-scale neural networks can lead to information loss and ultimately to computational failures, necessitating local signal amplification at neuron - synaps…
Inhibitory neuristor based on metal-to-insulator transition
Victor Palin, Akash Agnihotri, Nareg Ghazikhanian +4
Mimicking the collective excitatory and inhibitory behaviors of biological neurons remains a critical challenge in the development of neuromorphic computing systems that rival the…
Disorder-driven stochastic dynamics in Mott resistive-switching systems
David J. Alspaugh, Lorenzo Fratino, Nareg Ghazikhanian +2
Controlled disorder in correlated materials provides a new route to emergent stochastic dynamics in neuromorphic hardware. Here we show that focused ion beam irradiation in VO$_{2}…
Jamming-controlled stochasticity in metal-insulator switching
Nicolò D'Anna, Nareg Ghazikhanian, Katherine Matthews +5
Understanding and controlling phase transitions is a fundamental part of physics and has been central to many technological revolutions, from steam engines to field-effect transist…
Electrically induced ferromagnetism in an irradiated complex oxide
Nareg Ghazikhanian, Pavel Salev, Dayne Sasaki +2
In metal-insulator transition materials, a small perturbation can shift the delicate balance between competing or coexisting electronic phases, leading to dramatic changes of the m…
Enhanced stochasticity in irradiated vanadium oxide oscillators
Nareg Ghazikhanian, David J. Alspaugh, Pavel Salev +3
Insulator-to-metal transition materials are highly sensitive to even minute deviations of stoichiometry, lattice defects, and disorder, which provides opportunities to engineer the…
Self-strain suppression of the metal-to-insulator transition in phase-change oxide devices
Nicolò D'Anna, Nareg Ghazikhanian, Erik S. Lamb +5
Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond con…
Voltage control of spin resonance in phase change materials
Tian-Yue Chen, Haowen Ren, Nareg Ghazikhanian +6
Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When thes…
Stress-tailoring magnetic anisotropy of VO/Ni bilayers
Christian T. Wolowiec, Juan Gabriel Ramírez, Min-Han Lee +4
We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of VO/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase…
Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature
Coline Adda, Min-Han Lee, Yoav Kalcheim +6
Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magnéli series, is o…