1 citations · 1 across the 4 of their papers we have counts for
4 papers
Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during C Post-Processing Forming Gas Annealing
Yu-Hsin Kuo, Chengyang Zhang, Priyankka Ravikumar +13
We investigate the impact of a monolithic three-dimensional (M3D) integration process-critical C post-processing forming gas anneal (FGA) on the electrical performance,…
Engineering Wake-Up-Free Ferroelectric Capacitors with Enhanced High-Temperature Reliability
Nashrah Afroze, Salma Soliman, Yu-Hsin Kuo +5
We systematically explore the design space of ferroelectric hafnium-zirconium oxide (H0.5Z0.5O or HZO) heterostructures for reliable high temperature operation. HZO films are depos…
Hf/Zr Superlattice-Based High-\k{appa} Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS
Taeyoung Song, Sanghyun Kang, Yu Hsin Kuo +7
Advanced logic transistors require gate dielectrics that achieve sub-nanometer equivalent oxide thickness (EOT), suppress leakage, and satisfy three key requirements: (i) compatibi…
Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2
Nashrah Afroze, Hamoon Fahrvandi, Guodong Ren +31
Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of…