4 papers
Edge emission from 265~nm UV-C LEDs grown by MBE on bulk AlN
Shivali Agrawal, Hsin-Wei S. Huang, Debaditya Bhattacharya +6
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm, 5 orders of on/off ratio, and low diff…
Low Resistance Non-Alloyed Ohmic Contacts to High Al Composition n-type AlGaN
Joseph E. Dill, Xianzhi Wei, Changkai Yu +6
Ohmic contacts to high (>70\%) Al content n-type AlGaN ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a…
Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
H-W S. Huang, S. Agrawal, D. Bhattacharya +2
Better wall plug efficiency of deep-ultraviolet light emitting diodes (DUV-LEDs) requires simultaneous low resistivity p-type and n-type contacts, which is a challenging problem. I…
The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN
Maike Gremmel, Chandrashekhar Prakash Savant, Debaditya Bhattacharya +3
This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusin…