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researcher

A. Gloskovskii

4 papers hereh-index 131k citations61 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2
  • cond-mat.mes-hall1
  • cond-mat.str-el1
same name
  • A. Gloskovskii — 11 papers
  • A. Gloskovskii — 8 papers, h 25
  • A. Gloskovskii — 5 papers, h 6
  • A. Gloskovskii — 3 papers
  • A. Gloskovskii — 1 paper, h 5
  • A. Gloskovskii — 1 paper

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

collaborators

4 papers

cond-mat.mtrl-sci2025

Extending the Growth Temperature-N Concentration Regime Through Pd Doping in Fe4N Thin Films

Rohit Kumar Meena, Akhil Tayal, Andrei Gloskovskii +1

Fe4N is a well-known anti-perovskite compound exhibiting high magnetization, high chemical stability, low coercivity, high Curie temperature, and high spin-polarization ratio. Ther…

cond-mat.str-el2025

Beyond being free: glassy dynamics of SrTiO3​-based two-dimensional electron gas

Jyotirmay Maity, Shashank Kumar Ojha, Prithwijit Mandal +5

Electron glasses offer a convenient laboratory platform to study glassy dynamics. Traditionally, the interplay between long-range Coulomb interactions and disorder is deemed instru…

cond-mat.mtrl-sci2024

Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study

Oliver Rehm, Lutz Baumgarten, Roberto Guido +6

Aluminum scandium nitride (Al1−x​Scx​N) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semicond…

cond-mat.mes-hall2024

Enabling two-dimensional electron gas with high room-temperature electron mobility exceeding 100 cm2/Vs at a perovskite oxide interface

Georg Hoffmann, Martina Zupancic, Aysha A. Riaz +7

In perovskite oxide heterostructures, bulk functional properties coexist with emergent physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface between…

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