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J. Wager

3 papers hereh-index 469.3k citations254 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2
  • physics.app-ph1

identity via Semantic Scholar / OpenAlex

collaborators

3 papers

cond-mat.mtrl-sci2026

Electrostatic Charge Model for Dual-Layer Oxide Thin-Film Transistors

MÃ¥ns J. Mattsson, John F. Wager, Matt W. Graham

A simple electrostatic two-equation model for dual-layer thin-film transistor (TFT) operation is developed. The model distributes electrostatic charge between the top and bottom se…

physics.app-ph2026

Shallow Trap States Control Electrical Performance of Amorphous Oxide Semiconductor Thin-Film Transistors

MÃ¥ns J. Mattsson, Jinhan Lee, Christopher E. Malmberg +10

The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. He…

cond-mat.mtrl-sci2024

Defect density of states of tin oxide and copper oxide p-type thin-film transistors

MÃ¥ns J. Mattsson, Kham M. Niang, Jared Parker +4

The complete subgap defect density of states (DoS) is measured using the ultrabroadband (0.15 to 3.5 eV) photoconduction response from p-type thin-film transistors (TFTs) of tin ox…

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