358 citations · 358 across the 3 of their papers we have counts for
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cond-mat.mes-hall2026
Resonant-enhanced tunneling electroresistance in sliding ferroelectric tunnel junctions
Ruixue Wang, Jiangang Chen, Er Pan +10
The escalating demand for memory scaling requires switching mechanisms that remain reliable at atomic thickness while operating with minimal energy consumption. Sliding ferroelectr…
cond-mat.mes-hall2013★ 358 cited
Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
Song-Lin Li, Katsunori Wakabayashi, Yong Xu +6
Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility (μ…