3 papers
cond-mat.mes-hall2026
Wafer-Level 1/f Noise Characterization of Scaled P-Type Nanosheets and Comparison with Planar HKMG Transistors
Ruben Asanovski, Anabela Veloso, Ben Kaczer +2
We present a comprehensive wafer-level 1/f noise study of scaled Gate-All-Around (GAA) p-type nanosheet transistors and benchmark them against large-area planar High- \k{appa} Meta…
quant-ph2026
Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays
Arne Loenders, Jacques Van Damme, Clement Godfrin +19
Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness…
cond-mat.mtrl-sci2026
Revealing the Partially Coherent Nature of Transport in IGZO
Ying Zhao, Michiel J. van Setten, Anastasiia Kruv +10
Thin-film transistors based on amorphous oxide semiconductors (AOS) are promising candidates for enabling further DRAM scaling and 3D integration, which are critical for advanced c…