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researcher

Guangxin Ni

1 paper here

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author position
  • middle author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
ORCID 0000-0002-7216-1829

identity via Semantic Scholar / OpenAlex

most citedGate-controlled non-volatile graphene-ferroelectric memory

257 citations · 257 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mes-hall2009★ 257 cited

Gate-controlled non-volatile graphene-ferroelectric memory

Yi Zheng, Guang-Xin Ni, Chee-Tat Toh +4

In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.