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researcher

Roman G. Polozkov

2 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author2

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall2
ORCID 0000-0002-6996-3097

identity via Semantic Scholar / OpenAlex

most citedMeasurement of local optomechanical properties of a direct bandgap 2D semiconductor

23 citations · 23 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2019★ 23 cited

Measurement of local optomechanical properties of a direct bandgap 2D semiconductor

F. Benimetskiy, V. Sharov, P. A. Alekseev +12

Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors wi…

cond-mat.mes-hall2013

Spin transport in Aharonov-Bohm ring with exchange interaction

I. G. Savenko, R. G. Polozkov, I. A. Shelykh

We investigate spin-dependent conductance through a quantum Aharonov-Bohm ring containing localized electrons which interact with the propagating flow of electrons via exchange int…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.