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physics.app-ph2026
Physics-based Full-band GaN High-Electron-Mobility Transistor Simulation Suggests Upper Bound of LO Phonon Lifetime
Ankan Ghosh Dastider, Matt Grupen, Ashwin Tunga +1
Intrinsic limits to device performance arise from fundamental material properties that define the best achievable operation, independent of engineering constraints. In GaN high-ele…
physics.app-ph2023
Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors
Ashwin Tunga, Zijing Zhao, Ankit Shukla +2
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts.…