Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

B. Orfao, M. Abou Daher, H. Bouillaud +5

In this work, we analyse the reverse current mechanisms in GaN Schottky barrier diodes (SBDs) grown on sapphire and native GaN substrates. For the sapphire-substrate sample, two co…