2 papers
physics.app-ph2026
Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
B. Orfao, M. Abou Daher, H. Bouillaud +5
In this work, we analyse the reverse current mechanisms in GaN Schottky barrier diodes (SBDs) grown on sapphire and native GaN substrates. For the sapphire-substrate sample, two co…
physics.optics2025
Effect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaN
M. Dub, P. Sai, D. Yavorskiy +6
The effect of temperature on two-dimensional plasmons in large-area AlGaN/GaN plasmonic crystals was studied experimentally. With the temperature increase the resonant plasmon freq…