2 papers
cond-mat.mes-hall2026
Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
Jingrui Ma, Yuan Kang, Rui Wu +11
Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior…
cond-mat.mes-hall2023
Ultrafast switchable spin-orbit coupling for silicon spin qubits via spin valves
Ranran Cai, Fang-Ge Li, Bao-Chuan Wang +3
Recent experimental breakthroughs, particularly for single-qubit and two-qubit gates exceeding the error correction threshold, highlight silicon spin qubits as leading candidates f…