7 papers
Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
Jingrui Ma, Yuan Kang, Rui Wu +11
Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior…
A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots
Ming Ni, Rong-Long Ma, Zhen-Zhen Kong +11
To realize large-scale quantum information processes, an ideal scheme for two-qubit operations should enable diverse operations with given hardware and physical interaction. Howeve…
Coupling of hole double quantum dot in planar germanium to a microwave cavity
Yuan Kang, Zong-Hu Li, Zhen-Zhen Kong +10
In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approa…
A SWAP Gate for Spin Qubits in Silicon
Ming Ni, Rong-Long Ma, Zhen-Zhen Kong +13
With one- and two-qubit gate fidelities approaching the fault-tolerance threshold for spin qubits in silicon, how to scale up the architecture and make large arrays of spin qubits…
Single spin qubit geometric gate in a silicon quantum dot
Rong-Long Ma, Ao-Ran Li, Chu Wang +11
Preserving qubit coherence and maintaining high-fidelity qubit control under complex noise environment is an enduring challenge for scalable quantum computing. Here we demonstrate…
Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
Rong-Long Ma, Sheng-Kai Zhu, Zhen-Zhen Kong +9
High-fidelity singlet-triplet state readout is essential for large-scale quantum computing. However, the widely used threshold method of comparing a mean value with the fixed thres…