8 citations · 12 across the 3 of their papers we have counts for
4 papers
Design optimization of the inter-electrode structures in DC-RSD
N. Cartiglia, R. Arcidiacono, G. Bardelli +20
DC-coupled Resistive Silicon Detectors (RSD) share charge among electrodes through a resistive n surface layer, and the choice of inter-electrode structure --- a trench, a resi…
Why (and How) LGADs Work: Ionization, Space Charge, and Gain Saturation
N. Cartiglia, A. R. Altamura, R. Arcidiacono +10
The temporal resolution of Low-Gain Avalanche Detectors (LGADs), also known as Ultra-Fast Silicon Detectors (UFSDs), is governed by two contributions: jitter, arising from electron…
Depletion depth measurements of new large area silicon carbide detectors
A. Spatafora, D. Carbone, L. La Fauci +9
The ion beam induced charge technique with proton microprobe is used to characterise newly developed p-n junction large area silicon carbide detectors. They were recently produced…
Characterization of newly developed large area SiC sensors for the NUMEN experiment
D. Carbone, A. Spatafora, D. Calvo +7
First prototypes of large area, p-n junction, silicon carbide (SiC) detectors have been produced as part of an ongoing programme to develop a new particle identification wall for t…