most citedA Suspended 4H-Silicon Carbide Membrane Platform for Defect Integration into Quantum Devices

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cond-mat.mtrl-sci2026

Heterogeneous Transfer of Thin Film BaTiO onto Silicon for Device Fabrication

Temazulu S. Zulu, Larissa B. Little, Aaron M. Day +9

Thin film BaTiO has one of the highest known Pockels coefficients (>1200 pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integra…