2 papers
cond-mat.mes-hall2026
Localized emission in MoSe monolayers on GaN nanopillars
Abderrahim Lamrani Alaoui, Álvaro Moreno, Maximilian Heithoff +12
Solid-state quantum emitters (QEs) in two-dimensional semiconductors offer compact, chip-compatible sources for quantum photonics. In transition-metal dichalcogenides (TMDs), nanop…
cond-mat.mtrl-sci2023
Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion
Benjamin Damilano, Rémi Aristégui, Henryk Teisseyre +8
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the pho…