Elimination of the acoustoelectric domain and increasing of the emission intensity by means of shunting the lateral current in the InGaAs/GaAs heterostructures

P. A. Belevskii, M. N. Vinoslavskii, O. S. Pylypchuk

There has been experimentally implemented a technique of neutralization of an acoustoelectric domain under the conditions of the lateral transport of charge carriers in strong elec…