2 papers
cond-mat.mtrl-sci2026
Mobile charges in MoS2/high-k oxide transistors: from abnormal instabilities to memory-like dynamics
Shaokai Zhou, Haihui Cai, Yehao Wu +6
MoS field-effect transistors (FETs) with high-\textit{k} oxides currently lag behind silicon standards in bias and temperature stability due to ubiquitous border oxide traps th…
physics.app-ph2025
Hysteresis Measurements as a Diagnostic Tool: A Systematic Approach for Stability Benchmarking and Performance Projection of 2D-Materials-Based MOSFETs
Alexander Karl, Dominic Waldhoer, Theresia Knobloch +19
Judging by its omnipresence in the literature, the hysteresis observed in the transfer characteristics of emerging transistors based on 2D-materials is widely accepted as an import…