4 papers
Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics
Marshall B. Frye, Chanyoung Kim, Jeong-Woo Sun +8
Interleaving dielectric layers into ferroelectric Hf0.5Zr0.5O2 (HZO) films increases the memory window (MW) beyond what is accounted for by the dielectric constants. Determining th…
ALD-Derived WO3-x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated Temperatures
Nashrah Afroze, Jihoon Choi, Salma Soliman +10
Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-l…
Hf/Zr Superlattice-Based High-\k{appa} Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS
Taeyoung Song, Sanghyun Kang, Yu Hsin Kuo +7
Advanced logic transistors require gate dielectrics that achieve sub-nanometer equivalent oxide thickness (EOT), suppress leakage, and satisfy three key requirements: (i) compatibi…
A Dual-Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High-Speed Reservoir Computing
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman +6
The exponential growth of edge artificial intelligence demands material-focused solutions to overcome energy consumption and latency limitations when processing real-time temporal…