35 citations · 50 across the 15 of their papers we have counts for
4 papers · 2 filters
Mechanisms of Resistive Switching in 2D Monolayer and Multilayer Materials
M. Kaniselvan, Y. R. Jeon, M. Mladenović +2
The power and energy consumption of resistive switching devices can be lowered by reducing their active layer dimensions. Efforts to push this low-energy switching property to its…
Termination-Dependent Resistive Switching in SrTiO Valence Change Memory Cells
Marko Mladenović, Manasa Kaniselvan, Christoph Weilenmann +2
Valence change memory (VCM) cells based on SrTiO (STO), a perovskite oxide, are a promising type of emerging memory device. While the operational principle of most VCM cells re…
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering
Manasa Kaniselvan, Kevin Portner, Donato Francesco Falcone +6
A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltag…
Learning the Electronic Hamiltonian of Large Atomic Structures
Chen Hao Xia, Manasa Kaniselvan, Alexandros Nikolaos Ziogas +4
Graph neural networks (GNNs) have shown promise in learning the ground-state electronic properties of materials, subverting ab initio density functional theory (DFT) calculations w…