6 citations · 10 across the 11 of their papers we have counts for
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cond-mat.mes-hall2024★ 6 cited
Electron-Electron Interactions in Device Simulation via Non-equilibrium Green's Functions and the GW Approximation
Leonard Deuschle, Jiang Cao, Alexandros Nikolaos Ziogas +4
The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller…
cond-mat.mes-hall2024★ 4 cited
Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors
Chen Hao Xia, Leonard Deuschle, Jiang Cao +2
Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely…