most citedSerinv: A Scalable Library for the Selected Inversion of Block-Tridiagonal with Arrowhead Matrices

2 citations · 2 across the 5 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2026

Acceleration of Atomistic NEGF: Algorithms, Parallelization, and Machine Learning

Mathieu Luisier, Nicolas Vetsch, Alexander Maeder +8

The Non-equilibrium Green's function (NEGF) formalism is a particularly powerful method to simulate the quantum transport properties of nanoscale devices such as transistors, photo…

cond-mat.dis-nn2026

Machine-Learned Hamiltonians for Quantum Transport Simulation of Valence Change Memories

Chen Hao Xia, Manasa Kaniselvan, Marko Mladenoivić +1

The construction of the Hamiltonian matrix \textbf{H} is an essential, yet computationally expensive step in \textit{ab-initio} device simulations based on density-functional theor…

cs.DC2026

Parallel Quadratic Selected Inversion in Quantum Transport Simulation

Vincent Maillou, Matthias Bollhofer, Olaf Schenk +2

Driven by Moore's Law, the dimensions of transistors have been pushed down to the nanometer scale. Advanced quantum transport (QT) solvers are required to accurately simulate such…

stat.CO2025

Accelerated Spatio-Temporal Bayesian Modeling for Multivariate Gaussian Processes

Lisa Gaedke-Merzhäuser, Vincent Maillou, Fernando Rodriguez Avellaneda +5

Multivariate Gaussian processes (GPs) offer a powerful probabilistic framework to represent complex interdependent phenomena. They pose, however, significant computational challeng…

cs.LG2025

Distributed Equivariant Graph Neural Networks for Large-Scale Electronic Structure Prediction

Manasa Kaniselvan, Alexander Maeder, Chen Hao Xia +2

Equivariant Graph Neural Networks (eGNNs) trained on density-functional theory (DFT) data can potentially perform electronic structure prediction at unprecedented scales, enabling…

cond-mat.mtrl-sci2025

Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering

Manasa Kaniselvan, Kevin Portner, Donato Francesco Falcone +6

A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltag…