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math.NA2026
Adjoint-Based Bayesian Uncertainty Quantification for PDE-Constrained Inverse Problems with Application to Semiconductor Imaging
Hassan Yazdanian, Leila Taghizadeh, Babak Maboudi Afkham
We formulate a Bayesian framework for reconstructing doping profiles in pn-junction semiconductor devices from boundary flux measurements. The unknown doping field is modeled as a…
math.NA2024
Bayesian inversion for the identification of the doping profile in unipolar semiconductor devices
Leila Taghizadeh, Ansgar Jüngel
A rigorous Bayesian formulation of the inverse doping profile problem in infinite dimensions for a stationary linearized unipolar drift-diffusion model for semiconductor devices is…