65 citations · 82 across the 8 of their papers we have counts for
8 papers · 1 filter
Multiferroicity in the two-dimensional limit in hexagonal LuFeO3 films
Huilin Lai, Junyu Tan, Jinfeng Zhai +15
Multiferroic oxides, which combine coupled ferroelectric and magnetic orders, are central to understanding correlated quantum phenomena. Yet, as thickness approaches the two-dimens…
Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2
Baichen Lin, Shanquan Chen, Yubo Zhang +18
Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is oft…
Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films
Chao Zhou, Sizhe Huang, Yangyang Si +10
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memo…
Enhancing ferroelectric stability: Wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices
Jingxuan Li, Shiqing Deng, Liyang Ma +12
The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industria…
Designing Optimal Distorted-Octahedra Superlattices for Strong Topological Hall Effect
Yiyan Fan, Qinghua Zhang, Jingdi Lu +11
Topologically protected spin states hold great promise for applications in next generation of memory circuits and spintronic devices. These intriguing textures typically emerge in…
Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films
Yangyang Si, Ningbo Fan, Yongqi Dong +13
Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in…
Origin of Interstitial Doping Induced Coercive Field Reduction in Ferroelectric Hafnia
Tianyuan Zhu, Liyang Ma, Xu Duan +1
Hafnia-based ferroelectrics hold promise for nonvolatile ferroelectric memory devices. However, the high coercive field required for polarization switching remains a prime obstacle…
Progress in Computational Understanding of Ferroelectric Mechanisms in HfO
Tianyuan Zhu, Liyang Ma, Shiqing Deng +1
Since the first report of ferroelectricity in nanoscale HfO-based thin films in 2011, this silicon-compatible binary oxide has quickly garnered intense interest in academia and…