2 papers
cond-mat.mes-hall2026
Strong radial electric field scaling near nanoscale conductive filaments and the ReRAM resistive switching mechanism
Robin Jacobs-Gedrim, William Wahby, Thomas Awe +10
The physics underlying reset in bipolar resistive memory has been the subject of decades of controversy and has been identified as the primary barrier to resistive memory technolog…
physics.app-ph2017
Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations
J. L. Pacheco, D. L. Perry, D. R. Hughart +2
We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characte…