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In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 °C
Botong Li, Bobby G. Duersch, Hunter Ellis +6
The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-…
In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C
Hunter Ellis, Bobby G. Duersch, Botong Li +4
NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) fro…
High thermal conductivity of rutile-GeO films grown by MOCVD:
Imteaz Rahaman, Michael E. Liao, Ziqi Wang +10
Rutile germanium dioxide (r-GeO2) has recently emerged as a promising ultrawide-bandgap (UWBG) semiconductor owing to its wide bandgap (~4.4-5.1 eV), ambipolar doping potential, an…
Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO Films Grown by MOCVD on r- and c-Plane Sapphires
Botong Li, Imteaz Rahaman, Hunter Ellis +3
Ultrawide-bandgap (UWBG) semiconductors, such as GeO, are gaining significant attention for their potential in high-performance applications, particularly in piezoelectric devi…