activity
20242026
most citedPolytypic Quantum Wells in Si and Ge: Impact of 2D Hexagonal Inclusions on Electronic Band Structure

6 citations · 14 across the 8 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2026

Growth and characterization of planar hexagonal Ge on CdS

Andrea Besana, Veronica Regazzoni, Marco Faverzani +13

Hexagonal group-IV semiconductors have attracted increasing interest owing to their unconventional electronic and optical properties compared to the cubic diamond phase. However, t…

cond-mat.mtrl-sci2026

Resolving the Metastable Si-XIII Structure through Convergent Theory and Experiment

Fabrizio Rovaris, Corrado Bongiorno, Anna Marzegalli +10

Silicon is the undisputed cornerstone of modern technology, with applications ranging from micro- and opto-electronics to quantum technologies. Recently, the exploration of its all…

cond-mat.mtrl-sci2026

Interface stability of beta-Ga2O3 (100) on oxidized Si- and C-terminated 3C-SiC (001) substrates: a first-principles investigation

Marica Licciardi, Aldo Ugolotti, Emilio Scalise +1

We provide a first-principles modeling of the beta-Ga2O3/3C-SiC interface that takes into account the reconstructions occurring at the 3C-SiC (001) surface by oxidation, aiming to…

cond-mat.mtrl-sci2026

Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations

Veronica Regazzoni, Fabrizio Rovaris, Anna Marzegalli +2

Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic propertie…

cond-mat.mtrl-sci2025★ 2 cited

Interaction of dopants with the I-type basal stacking fault in hexagonal-diamond Si

Marc Túnica, Perpetua Wanjiru Muchiri, Alberto Zobelli +3

Recently synthesized hexagonal-diamond silicon, germanium, and silicon-germanium nanowires exhibit remarkable optical and electronic properties when compared to cubic-diamond polyt…

cond-mat.mtrl-sci2024

Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained

Ilaria Bertoni, Aldo Ugolotti, Emilio Scalise +2

Despite the extensive work carried out on the epitaxial growth of Ga2O3, a fundamental understanding of the nucleation of its different metastable phases is still lacking. Here we…

cond-mat.mtrl-sci2024★ 3 cited

Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation

Mouad Bikerouin, Anna Marzegalli, Davide Spirito +10

We present a comprehensive study on the formation of micrometer-sized, textured hexagonal diamond silicon (hd-Si) crystals via nanoindentation followed by annealing. Utilizing adva…

cond-mat.mtrl-sci2024★ 3 cited

Unraveling the Atomic-Scale Pathways Driving Pressure-Induced Phase Transitions in Silicon

Fabrizio Rovaris, Anna Marzegalli, Francesco Montalenti +1

Silicon exhibits several metastable allotropes which recently attracted attention in the quest for materials with superior (e.g. optical) properties, compatible with Si technology.…

cond-mat.mtrl-sci2024★ 6 cited

Polytypic Quantum Wells in Si and Ge: Impact of 2D Hexagonal Inclusions on Electronic Band Structure

Anna Marzegalli, Francesco Montalenti, Emilio Scalise

Crystal defects, traditionally viewed as detrimental, are now being explored for quantum technology applications. This study focuses on stacking faults in silicon and germanium, fo…