activity
20232026
most citedUnconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions

9 citations · 10 across the 9 of their papers we have counts for

collaborators

10 papers

cond-mat.mtrl-sci2026

Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer

Zelalem Abebe Bekele, Kun Lei, Xiukai Lan +8

The spin Hall effect provides a well-established route for electrical magnetization control, while the orbital Hall effect offers a powerful yet less explored source of angular mom…

cond-mat.mtrl-sci2026

Epitaxial growth and magneto-transport properties of kagome metal FeGe thin films

Xiaoyue Song, Yanshen Chen, Yongcheng Deng +5

Antiferromagnetic kagome metal FeGe has attracted tremendous attention in condensed matter physics due to the charge density wave (CDW) being well below its magnetic transition tem…

cond-mat.mes-hall2025

Two-dimensional magnetic tunnel p-n junctions for low-power electronics

Wenkai Zhu, Ziao Wang, Tiangui Hu +13

For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin)…

cond-mat.mtrl-sci2025

Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer

Zelalem Abebe Bekele, Kun Lei, Xiukai Lan +7

The spin Hall effect (SHE) enables efficient electrical manipulation of magnetization through the spin Hall current \left(\mathbit{J}_{\mathbit{SHE}}\right), advancing energy-effic…

cond-mat.mtrl-sci2025★ 9 cited

Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions

Wenkai Zhu, Hui Wen, Shouguo Zhu +14

Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects du…

cond-mat.mtrl-sci2024

Electric-field control of the perpendicular magnetization switching in ferroelectric/ferrimagnet heterostructures

Pengfei Liu, Tao Xu, Qi Liu +10

Electric field control of the magnetic state in ferrimagnets holds great promise for developing spintronic devices due to low power consumption. Here, we demonstrate a non-volatile…

physics.app-ph2024

Analytical photoresponses of gated nanowire photoconductors

Yinchu Shen, Jiajing He, Yang Xu +2

Low-dimensional photoconductors have extraordinarily high photoresponse and gain, which can be modulated by gate voltages as shown in literature. However, the physics of gate modul…

cond-mat.mes-hall2024

Orbital Hall effect assisted field-free perpendicular magnetization switching

Zelalem Abebe Bekele, Yuan-Yuan Jiang, Kun Lei +5

Spin-orbit torques (SOTs) generated through the conventional spin Hall effect (SHE) and/or Rashba-Edelstein effect offer potential for magnetization manipulation. However, determin…

physics.app-ph2024

Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions

Shouguo Zhu, Hailong Lin, Wenkai Zhu +3

The magnetic tunnel junctions (MTJ) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that s…

cond-mat.mtrl-sci2023★ 1 cited

Electric-field Switching of Interlayer Magnetic Order in a van der Waals Heterobilayer via Spin-potential Coupling

Chengxi Huang, Jinzhe Han, Jing Wang +7

Electric-field switching of magnetic order is of significant physical interest and holds great potential for spintronic applications. However, it has rarely been reported in two-di…