activity
20232026
most citedContact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices

49 citations · 51 across the 6 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2026

Hydrogen plasma-assisted atomic layer epitaxy of superconducting titanium nitride

Yi-Hsun Chen, Yin-Chun Huang, Zachary Degnan +10

Atomic layer deposition (ALD) offers precise, conformal control of thin-film growth and is a workhorse for semiconductor manufacturing, but its use in superconducting quantum circu…

cond-mat.mtrl-sci2026★ 1 cited

Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor

Kaijian Xing, Zherui Yang, Weiyao Zhao +17

The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communica…

cond-mat.mtrl-sci2026

Disorder-induced symmetry breaking in moiré bands of marginally twisted bilayer MoS

Pablo Reséndiz-Vázquez, Christophe de Beule, Thi-Hai-Yen Vu +8

Twisted transition-metal dichalcogenides host highly tunable moiré potentials, flat bands, and correlated electronic phases, yet the role of disorder in shaping these emergent prop…

cond-mat.mtrl-sci2026★ 49 cited

Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices

Xiongfang Liu, Kaijian Xing, Chi Sin Tang +7

The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic…

physics.optics2025★ 1 cited

Valley optoelectronics based on meta-waveguide photodetectors

Chi Li, Kaijian Xing, Wenhao Zhai +10

In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral ph…

physics.app-ph2024

Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication

Kaijian Xing, Daniel McEwen, Weiyao Zhao +12

Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Ferm…

cond-mat.mes-hall2024

Imaging topological polar structures in marginally twisted 2D semiconductors

Thi-Hai-Yen Vu, Daniel Bennett, Gayani Nadeera Pallewella +16

Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique proper…

cond-mat.mtrl-sci2023

Non-Drude THz conductivity of graphene due to structural distortions

Tan-Phat Nguyen, Mykhailo Klymenko, Gary Beane +7

The remarkable electrical, optical and mechanical properties of graphene make it a desirable material for electronics, optoelectronics and quantum applications. A fundamental under…