activity
20242026
most citedReactivity of ultra-thin Kagome Metal FeSn towards Oxygen and Water

3 citations · 4 across the 6 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2026

Disorder-induced symmetry breaking in moiré bands of marginally twisted bilayer MoS

Pablo Reséndiz-Vázquez, Christophe de Beule, Thi-Hai-Yen Vu +8

Twisted transition-metal dichalcogenides host highly tunable moiré potentials, flat bands, and correlated electronic phases, yet the role of disorder in shaping these emergent prop…

cond-mat.mtrl-sci2025

Spin-polarised surface fermiology of ohmic WSe/NbSe interfaces

Oliver J. Clark, Thi-Hai-Yen Vu, Ben A. Chambers +9

Discovering and engineering spin-polarised surface states in the electronic structures of condensed matter systems is a crucial first step in development of spintronic devices, whe…

cond-mat.mtrl-sci2025

Designer three-dimensional electronic bands in asymmetric transition metal dichalcogenide heterostructures

Oliver J. Clark, Anugrah Azhar, Ben A. Chambers +15

Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in…

cond-mat.str-el2024★ 1 cited

Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2

Liam Watson, Iolanda Di Bernardo, James Blyth +6

The strong electron-electron interaction in transition metal dichalcogenides (TMDs) gives rise to phenomena such as strong exciton and trion binding and excitonic condensation, as…

cond-mat.mtrl-sci2024★ 3 cited

Reactivity of ultra-thin Kagome Metal FeSn towards Oxygen and Water

James Blyth, Sadhana Sridhar, Mengting Zhao +9

The kagome metal FeSn, consists of alternating layers of kagome-lattice Fe3Sn and honeycomb Sn2, and exhibits great potential for applications in future low energy electronics and…

physics.app-ph2024

Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication

Kaijian Xing, Daniel McEwen, Weiyao Zhao +12

Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Ferm…

cond-mat.mes-hall2024

Imaging topological polar structures in marginally twisted 2D semiconductors

Thi-Hai-Yen Vu, Daniel Bennett, Gayani Nadeera Pallewella +16

Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique proper…