5 papers
GaN Nucleation Landscape on Patterned Sapphire Shaped by the Growth Temperature of Directly Grown Boron-Compound Masks
Yunjin Heo, Donghoi Kim, Hyeonoh Jo +4
The growth temperature of directly grown boron-compound masks on patterned sapphire can modify the local accessibility of the underlying sapphire surface and thereby alter the subs…
Propagation-mediated amplification of \{11\={2}0\}-biased inversion domain boundary alignment in polarity-mixed GaN lateral overgrowth
Harim Song, Donghoi Kim, Chinkyo Kim
GaN polarity inversion and the associated inversion domain boundaries (IDBs) are frequently observed during lateral overgrowth and are often discussed in terms of the small energet…
Controlling GaN nucleation via O-plasma-perforated graphene masks on c-plane sapphire
Su Young An, Chinkyo Kim
Atomically thin, perforated graphene on -plane sapphire functions as a nanoscale mask that enables GaN growth through thru-holes. We tune the perforated-area fraction by c…
Scalable thru-hole epitaxy of GaN through self-adjusting -BN masks via solution-processed 2D stacks
Jongwoo Ha, Minah Choi, Jieun Yang +1
Selective epitaxy on 2D-material masks is a promising pathway for achieving localized, defect-suppressed GaN growth, but conventional 2D transfer processes limit scalability and in…
TBA-enabled spin-coating of a percolatively connected GO nanosieve for thru-hole epitaxy: tuning GO flake stacking and coverage to control GaN nucleation
Gunhoon Beak, Changwook Dong, Minah Choi +3
We report a spin-coating-based approach for forming a percolatively connected graphene oxide (GO) nanosieve on SiO-patterned sapphire substrates, where the addition of tetrabut…