Sourav Sarker

collaborators

5 papers

cond-mat.mtrl-sci2026

Sn-Doping in LPCVD-Grown (010) $β$ -Ga $_{2}$ O $_{3}$ Films

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +1

In this work, Sn-doped (010) $β$ -Ga $_{2}$ O $_{3}$ homoepitaxial films were grown by low-pressure chemical vapor deposition (LPCVD), and the influence of Sn incorporation on their struct…

cond-mat.mtrl-sci2026

High-Mobility Ge-Doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +5

In this work, high-quality Ge-doped (-201) $I^^{2}$ -Ga $_{2}$ O $_{3}$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8…

cond-mat.mtrl-sci2026

High-Quality Ge-Doped (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker +3

In this work, Ge-doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ homoepitaxial films were grown on native (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ substrates using low-pressure chemical vapor deposition (LPCVD). Controlled…

physics.app-ph2026

Fast-Neutron Irradiation Effect in Heteroepitaxial $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +2

In this work, we investigate the response of Ni/ $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{1…

physics.app-ph2026

HVPE Growth of Si-Doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +1

Si-doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline…

Sn-Doping in LPCVD-Grown (010) β-Ga2​O3​ Films

High-Mobility Ge-Doped I^2-Ga2​O3​ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) I^2-Ga2​O3​ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Fast-Neutron Irradiation Effect in Heteroepitaxial I^2-Ga2​O3​ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

HVPE Growth of Si-Doped I^2-Ga2​O3​ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

Sn-Doping in LPCVD-Grown (010) $β$ -Ga $_{2}$ O $_{3}$ Films

High-Mobility Ge-Doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

High-Quality Ge-Doped (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Fast-Neutron Irradiation Effect in Heteroepitaxial $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

HVPE Growth of Si-Doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties