10 papers
Direct Observation of Nanoscale Polarization Switching in HZO Ferroelectrics Using STEM-EBIC
Prasanna Venkatesan, Taeyoung Song, Yueyun Chen +22
We report the experimental observation of discrete ferroelectric switching down to 0.475 nm x 0.475 nm in HfO2-based ferroelectrics using correlated STEM electron beam induced curr…
Multi-bit Ferroelectric-NAND for High-throughput Massive Database Search
Prasanna Venkatesan, Tanvir H. Pantha, Po-Kai Hsu +28
The growing demand for large-scale database search in data-intensive applications, ranging from proteomics to autonomous systems, has exposed fundamental limitations in von Neumann…
Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors
Gyujun Jeong, Junmo Lee, Sungwon Cho +11
Experimental TCAD calibration is essential for predictive technology modeling of emerging oxide semiconductor transistors. However, it remains time-consuming and expert dependent b…
Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors
Lance Fernandes, Yu-Hsin Kuo, Chengyang Zhang +15
In this work, we report a systematic study of the impact of high-temperature post-capping thermal annealing on the memory characteristics of Oxide-semiconductor channel ferroelectr…
Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model
Gyujun Jeong, Sungwon Cho, Minji Shon +13
Ferroelectric field-effect transistors (FeFET)-based vertical NAND (Fe-VNAND) has emerged as a promising candidate to overcome z-scaling limitations with lower programming voltages…
ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications
Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes +12
Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material…
Vertical NAND in a Ferroelectric-driven Paradigm Shift
Giuk Kim, Hyojun Choi, Prasanna Venkat Ravindran +12
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by i…
FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) Flash
Sumukh Pinge, Ashkan Moradifirouzabadi, Keming Fan +29
The rapid expansion of mass spectrometry (MS) data, now exceeding hundreds of terabytes, poses significant challenges for efficient, large-scale library search - a critical compone…
An In-Situ Spatial-Temporal Sequence Detector for Neuromorphic Vision Sensor Empowered by High Density Vertical NAND Storage
Zijian Zhao, Varun Darshana Parekh, Po-Kai Hsu +17
Neuromorphic vision sensors require efficient real-time pattern recognition, yet conventional architectures struggle with energy and latency constraints. Here, we present a novel i…
Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate
Zijian Zhao, Sola Woo, Khandker Akif Aabrar +22
In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. W…