3 papers
cond-mat.mes-hall2025
Hf/Zr Superlattice-Based High-\k{appa} Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS
Taeyoung Song, Sanghyun Kang, Yu Hsin Kuo +7
Advanced logic transistors require gate dielectrics that achieve sub-nanometer equivalent oxide thickness (EOT), suppress leakage, and satisfy three key requirements: (i) compatibi…
cond-mat.other2025
A Dual-Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High-Speed Reservoir Computing
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman +6
The exponential growth of edge artificial intelligence demands material-focused solutions to overcome energy consumption and latency limitations when processing real-time temporal…
cs.AR2025
FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) Flash
Sumukh Pinge, Ashkan Moradifirouzabadi, Keming Fan +29
The rapid expansion of mass spectrometry (MS) data, now exceeding hundreds of terabytes, poses significant challenges for efficient, large-scale library search - a critical compone…