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cond-mat.mtrl-sci2026
Engineering Wake-Up-Free Ferroelectric Capacitors with Enhanced High-Temperature Reliability
Nashrah Afroze, Salma Soliman, Yu-Hsin Kuo +5
We systematically explore the design space of ferroelectric hafnium-zirconium oxide (H0.5Z0.5O or HZO) heterostructures for reliable high temperature operation. HZO films are depos…
cond-mat.mtrl-sci2026
ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications
Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes +12
Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material…
cond-mat.mtrl-sci2026
The First Switch Effect in Ferroelectric Field-Effect Transistors
Priyankka Ravikumar, Prasanna Venkatesan, Chinsung Park +7
In this work, a ferroelectric field-effect transistor (FEFET) is systematically characterized and compared with an equivalent standard MOSFET with an equivalent oxide thickness. We…