activity
20132025
most citedDirect observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

16 citations · 23 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2025★ 2 cited

Unlocking High-Throughput Heterojunction Discovery

Thomas W. Gries, Davide Regaldo, Yanyan Duan +8

Photoluminescence (PL) is a ubiquitous proxy for material quality in optoelectronic devices, widely used for high-throughput materials discovery. However, we demonstrate that in th…

cond-mat.mtrl-sci2025

Unraveling the defect landscape of wide-bandgap perovskites from electrical and photoelectrical characterization of thin films and solar cells

L. Kopprio, J. Caram, S. Le Gall +7

Understanding and controlling defect states in halide perovskites is critical to advancing their performance in solar cells, yet their complex defect landscape remains elusive. Cha…

cond-mat.mtrl-sci2024★ 2 cited

Enhanced Electron Extraction in Co-Doped TiO2 Quantified by Drift-Diffusion Simulation for Stable CsPbI3 Solar Cells

Thomas W. Gries, Davide Regaldo, Hans Koebler +22

Solar cells based on inorganic perovskite CsPbI3 are promising candidates to resolve the challenge of operational stability in the field of perovskite photovoltaics. For stable ope…

cond-mat.mtrl-sci2014★ 16 cited

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

Jose Alvarez, M. Boutchich, J. P. Kleider +2

The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) an…

cond-mat.mtrl-sci2013★ 3 cited

Growth Route Toward III-V Multispectral Solar Cells on Silicon

C. Renard, N. Cherkashin, A. Jaffré +8

To date, high efficiency multijunction solar cells have been developed on Ge or GaAs substrates for space applications, and terrestrial applications are hampered by high fabricatio…