2 papers
physics.ins-det2025
Quantifying the Full Damage Profile of Focused Ion Beams via 4D-STEM Precession Electron Diffraction and PSNR Metrics
M. G. Masteghin, Z. P. Aslam, A. P. Brown +4
Focused ion beams (FIBs) are widely used in nanofabrication for applications such as circuit repair, ultra-thin lamella preparation, strain engineering, and quantum device prototyp…
cond-mat.mtrl-sci2025
Enhanced Secondary Electron Detection of Single Ion Implants in Silicon Through Thin SiO2 Layers
Ella B Schneider, Oscar G Lloyd-Willard, Kristian Stockbridge +7
Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for…