activity
20222026
most citedPerformance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

11 citations · 24 across the 17 of their papers we have counts for

collaborators

17 papers

physics.ins-det2026

Spectacular - A Modular DAQ System for Microdosimetry

Matthias Knopf, Simon Waid, Daniel Radmanovac +8

Particle therapy using light ions like protons, helium ions or carbon ions enables precise tumor targeting with enhanced biological effectiveness while minimizing damage to healthy…

hep-ex2026

A frontend ASIC for Microdosimetry

Simon Waid, Matthias Knopf, Giulio Magrin +6

Recent clinical evidence shows a correlation between linear energy transfer (LET) and tumor control in carbon ion radiotherapy. This prompts the direct inclusion of LET into the tr…

physics.ins-det2026

Measurements of the micro-spill structure of medical cyclotron and synchrotron beams and its impact on pulse pileup

Matthias Knopf, Simon Waid, Stefan Gundacker +10

Detector characterization and instrumentation testing are often performed at cyclotron and synchrotron facilities, many of which were originally developed for medical applications…

physics.ins-det2025★ 5 cited

Design and simulation of a 4H-SiC low gain avalanche diode with trench-isolation

Sebastian Onder, Philipp Gaggl, Jürgen Burin +6

We present the design and simulation of a 30 thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 thick epitaxially…

physics.ins-det2025★ 2 cited

In-situ Radiation Damage Study of Silicon Carbide Detectors Subjected to Clinical Proton Beams

Daniel Radmanovac, Andreas Gsponer, Simon Waid +5

Silicon carbide (SiC) planar PiN diodes from two different manufacturers were irradiated with 252.7 MeV protons from a medical synchrotron. Over the course of two 8h irradiation sh…

physics.ins-det2025

Extraction of Electron and Hole Drift Velocities in thin 4H-SiC PIN Detectors using High-Frequency Readout Electronics

Andreas Gsponer, Sebastian Onder, Stefan Gundacker +5

Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and…

physics.ins-det2025★ 1 cited

Characterizing the Delivered Spill Structure of Medical Proton and Carbon-Ion Beams at MedAustron using a High Frequency Silicon Carbide Readout

Matthias Knopf, Andreas Gsponer, Matthias Kausel +7

Medical synchrotrons are often used for testing instrumentation in high-energy physics or non-clinical research in medical physics. In many applications of medical synchrotrons, su…

physics.acc-ph2025★ 2 cited

From Single Particles to Clinical Beam Rates: A Wide Dynamic Range Beam Monitor

Simon Waid, Philipp Gaggl, Andreas Gsponer +4

Access to high-energy particle beams is key for testing high-energy physics (HEP) instruments. Accelerators for cancer treatment can serve as such a testing ground. However, HEP in…

physics.ins-det2024

Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements

Andreas Gsponer, Philipp Gaggl, Jürgen Burin +2

Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community…

cond-mat.mtrl-sci2024★ 2 cited

TCAD Parameters for 4H-SiC: A Review

Jürgen Burin, Philipp Gaggl, Simon Waid +2

In this literature review we investigate the permittivity, density-of-state mass, band gap, impact ionization, charge carrier recombination, incomplete ionization and mobility in 4…

physics.ins-det2024

TCAD Simulations of Radiation Damage in 4H-SiC

Jürgen Burin, Christopher Hahn, Philipp Gaggl +3

To increase the scientific output of particle physics experiments, upgrades are underway at all major accelerator facilities to significantly improve the luminosity. Consequently,…

physics.ins-det2024★ 1 cited

TCAD modeling of radiation-induced defects in 4H-SiC diodes

Philipp Gaggl, Jürgen Burin, Andreas Gsponer +3

Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity,…

physics.med-ph2023

Pulsed RF Knock-Out Extraction: A Potential Enabler for FLASH Hadrontherapy in the Bragg Peak

Simon Waid, Andreas Gsponer, Elisabeth Renner +7

One challenge on the path to delivering FLASH-compatible beams with a synchrotron is facilitating an accurate dose-control for the required ultra-high dose rates. We propose the us…

physics.ins-det2023

Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode

Andreas Gsponer, Matthias Knopf, Philipp Gaggl +3

For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy published in the literature vary significantly. This work presents an experime…

physics.ins-det2023

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Andreas Gsponer, Philipp Gaggl, Jürgen Maier +3

Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders…

physics.ins-det2023

SiC Based Beam Monitoring System for Particle Rates from kHz to GHz

Simon Waid, Andreas Gsponer, Jürgen Maier +3

The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particl…

physics.ins-det2022★ 11 cited

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

Philipp Gaggl, Andreas Gsponer, Richard Thalmeier +5

The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitousl…