5 citations · 9 across the 9 of their papers we have counts for
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Design and simulation of a 4H-SiC low gain avalanche diode with trench-isolation
Sebastian Onder, Philipp Gaggl, Jürgen Burin +6
We present the design and simulation of a 30 thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 thick epitaxially…
In-situ Radiation Damage Study of Silicon Carbide Detectors Subjected to Clinical Proton Beams
Daniel Radmanovac, Andreas Gsponer, Simon Waid +5
Silicon carbide (SiC) planar PiN diodes from two different manufacturers were irradiated with 252.7 MeV protons from a medical synchrotron. Over the course of two 8h irradiation sh…
Extraction of Electron and Hole Drift Velocities in thin 4H-SiC PIN Detectors using High-Frequency Readout Electronics
Andreas Gsponer, Sebastian Onder, Stefan Gundacker +5
Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and…
Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements
Andreas Gsponer, Philipp Gaggl, Jürgen Burin +2
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community…
TCAD Simulations of Radiation Damage in 4H-SiC
Jürgen Burin, Christopher Hahn, Philipp Gaggl +3
To increase the scientific output of particle physics experiments, upgrades are underway at all major accelerator facilities to significantly improve the luminosity. Consequently,…
Neutron Radiation induced Effects in 4H-SiC PiN Diodes
Andreas Gsponer, Philipp Gaggl, Jürgen Maier +3
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders…
SiC Based Beam Monitoring System for Particle Rates from kHz to GHz
Simon Waid, Andreas Gsponer, Jürgen Maier +3
The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particl…