11 citations · 21 across the 12 of their papers we have counts for
9 papers · 1 filter
Measurements of the micro-spill structure of medical cyclotron and synchrotron beams and its impact on pulse pileup
Matthias Knopf, Simon Waid, Stefan Gundacker +10
Detector characterization and instrumentation testing are often performed at cyclotron and synchrotron facilities, many of which were originally developed for medical applications…
Design and simulation of a 4H-SiC low gain avalanche diode with trench-isolation
Sebastian Onder, Philipp Gaggl, Jürgen Burin +6
We present the design and simulation of a 30 thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 thick epitaxially…
Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements
Andreas Gsponer, Philipp Gaggl, Jürgen Burin +2
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community…
TCAD Simulations of Radiation Damage in 4H-SiC
Jürgen Burin, Christopher Hahn, Philipp Gaggl +3
To increase the scientific output of particle physics experiments, upgrades are underway at all major accelerator facilities to significantly improve the luminosity. Consequently,…
TCAD modeling of radiation-induced defects in 4H-SiC diodes
Philipp Gaggl, Jürgen Burin, Andreas Gsponer +3
Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity,…
Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode
Andreas Gsponer, Matthias Knopf, Philipp Gaggl +3
For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy published in the literature vary significantly. This work presents an experime…
Neutron Radiation induced Effects in 4H-SiC PiN Diodes
Andreas Gsponer, Philipp Gaggl, Jürgen Maier +3
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders…
SiC Based Beam Monitoring System for Particle Rates from kHz to GHz
Simon Waid, Andreas Gsponer, Jürgen Maier +3
The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particl…
Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation
Philipp Gaggl, Andreas Gsponer, Richard Thalmeier +5
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitousl…