2 papers
cond-mat.mtrl-sci2026
Atom Probe Tomography as an Emerging Tool for Understanding Defect-driven Mechanisms in HfO-based Ferroelectrics
Kasper A. Hunnestad, Catherine Dubourdieu, Alexei Gruverman +1
HfO-based ferroelectrics are essential for the next generation of CMOS-compatible memory and logic devices, yet their performance is governed by a complex interplay between o…
cond-mat.mtrl-sci2025
Peak splitting and bias fields in ferroelectric hafnia mediated by interface charge effects
Moritz Engl, Wassim Hamouda, Ines Häusler +5
The pristine state of hafnium based ferroelectric devices exhibits various unwanted properties, such as imprint and peak splitting, which diminish with bipolar cycling. The incorpo…