6 papers
Atom Probe Tomography as an Emerging Tool for Understanding Defect-driven Mechanisms in HfO-based Ferroelectrics
Kasper A. Hunnestad, Catherine Dubourdieu, Alexei Gruverman +1
HfO-based ferroelectrics are essential for the next generation of CMOS-compatible memory and logic devices, yet their performance is governed by a complex interplay between o…
Chemical heterogeneity at conducting ferroelectric domain walls
Kasper A. Hunnestad, Guo-Dong Zhao, Mao-Hua Zhang +7
Natural interfaces in ferroic oxides have developed into versatile playgrounds for studying electronic correlation effects in 2D systems. The microscopic origin of the emergent loc…
Control of helix orientation in chiral magnets via lateral confinement
Maurice Colling, Mariia Stepanova, Mario Hentschel +7
Helimagnetic materials offer a versatile platform for spin-based device concepts owing to their long-range, tunable spiral order. Here, we demonstrate controlled manipulation of th…
Hybrid antiferroelectric-ferroelectric domain walls in noncollinear antipolar oxides
Ivan N. Ushakov, Mats Topstad, Muhammad Z. Khalid +15
Antiferroelectrics are emerging as advanced functional materials and are fertile ground for unusual electric effects. For example, they enhance the recoverable energy density in en…
Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects
Jiali He, Ursula Ludacka, Kasper A. Hunnestad +12
Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and c…
Ferroelectric domain walls for environmental sensors
L. Richarz, I. C. Skogvoll, E. Y. Tokle +9
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes…