4 papers
Investigation of Hopping Conduction and Its Impact on the Subthreshold and Transition Region Transport in Oxide Semiconductor Transistors by Magneto-Transport Measurements
Chen Wang, Liankai Zheng, Kai Jiang +4
In this work, magneto-transport measurements, including Hall effects and magnetoresistance (MR) at various temperatures, are employed to directly probe the electron transport prope…
Demonstrate of High-Performance Top-Gate ALD Crystalline In2O3 Transistor Enabled by Lattice-Matched HfO2 and In2O3 Heterostructure
Kai Jiang, Chen Wang, Ziheng Wang +2
In this work, we demonstrate high-mobility top-gate (TG) atomic-layer-deposited (ALD) crystalline In2O3 transistors through simultaneous interface and crystallinity engineering. Fi…
High-Mobility and High-Reliability Top-Gate Oxide Semiconductor Transistors by Oxygen Engineering
Kai Jiang, Zhiyu Lin, Ziheng Wang +2
In this work, we investigate the role of oxygen (O) on the performance of top-gate (TG) atomic-layer-deposited (ALD) oxide semiconductor transistors. The results reveal distinct de…
Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm2/Vs at Room Temperature
Chen Wang, Kai Jiang, Jinxiu Zhao +4
In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility (μH) exceeding 100 cm2/Vs at room temperature (RT). I…