most citedIn situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

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cond-mat.mtrl-sci2007★ 63 cited

In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

J. Schoermann, S. Potthast, D. J. As +1

Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively dete…